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Laser induced forward transfer for front contact improvement in silicon heteroj unction solar cells

Author
Colina, M.A.; Morales, A.; Voz, C.; Martin, I.; Ortega, P.; Lopez, G.; Lopez -Chavez, G.; Alcubilla, R.
Type of activity
Journal article
Journal
Applied surface science
Date of publication
2015-05-01
Volume
336
First page
89
Last page
95
DOI
https://doi.org/10.1016/j.apsusc.2014.09.172 Open in new window
Project funding
Dopado con láser del silicio cristalino: aplicación a emisores selectivos y nuevas estructuras de células solares
Repository
http://hdl.handle.net/2117/25234 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S0169433214021722 Open in new window
Abstract
In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only trans...
Citation
Colina, M.A. [et al.]. Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells. "Applied surface science", 01 Maig 2015.
Keywords
LIFT, Laser direct write, OPTIMIZATION, Silicon heterojunction solar cell
Group of research
MNT - Micro and Nanotechnologies Research Group

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