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FinFET and III-V/Ge technology impact on 3T1D cell behavior

Author
Amat, Esteve; Calomarde, A.; Almudever, C.G.; Aymerich, N.; Canal, R.; Rubio, A.
Type of activity
Presentation of work at congresses
Name of edition
Intel Ireland Research Conference
Date of publication
2013
Presentation's date
2013
Book of congress proceedings
Intel Ireland Research Conference
Repository
http://hdl.handle.net/2117/26567 Open in new window
Abstract
In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios (variability and soft errors). FinFET-based circuits show the highest robustness against variability and soft error environments.
Citation
Amat, Esteve [et al.]. FinFET and III-V/Ge technology impact on 3T1D cell behavior. A: Intel Ireland Research Conference. "Intel Ireland Research Conference". 2013.
Group of research
HIPICS - High Performance Integrated Circuits and Systems
VIRTUOS - Virtualisation and Operating Systems

Participants

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