In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios
(variability and soft errors). FinFET-based circuits show the highest robustness against variability and soft error environments.
Amat, Esteve [et al.]. FinFET and III-V/Ge technology impact on 3T1D cell behavior. A: Intel Ireland Research Conference. "Intel Ireland Research Conference". 2013.