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On-chip thermal testing using MOSFETs in weak inversion

Author
Reverter, F.; Altet, J.
Type of activity
Journal article
Journal
IEEE transactions on instrumentation and measurement
Date of publication
2015-02-01
Volume
64
Number
2
First page
524
Last page
532
DOI
https://doi.org/10.1109/TIM.2014.2341371 Open in new window
Project funding
Multilevel approach to the reliability-aware design of analog and digital integrated circuits
Repository
http://hdl.handle.net/2117/84660 Open in new window
Abstract
This paper analyzes the feasibility of using metal-oxide-semiconductor field-effect transistors (MOSFETs) operating in weak inversion as temperature sensors for on-chip thermal testing applications. MOSFETs in weak inversion are theoretically analyzed so as to know how their sensitivity to temperature depends on both dimensions and bias current. Theoretical predictions are then compared with simulations and experimental data resulting from MOSFETs fabricated in a commercial 0.35-µm CMOS technol...
Citation
Reverter, F., Altet, J. On-chip thermal testing using MOSFETs in weak inversion. "IEEE transactions on instrumentation and measurement", 01 Febrer 2015, vol. 64, núm. 2, p. 524-532.
Keywords
Metal-oxide-semiconductor field-effect transistors (MOSFETs) sensor, subthreshold operation, temperature sensor, thermal testing, weak inversion
Group of research
HIPICS - High Performance Integrated Circuits and Systems
e-CAT - Electronic Circuits and Transducers

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