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Efficiency comparison between SiC- and Si-based active neutral-point clamped converters

Author
Nicolas-Apruzzese, J.; Maset, E.; Busquets-Monge, S.; Esteve, V.; Bordonau, J.; Calle, A.; Jordán, J.
Type of activity
Presentation of work at congresses
Name of edition
ICIT - International Conference on Industrial Electronics
Date of publication
2015
Presentation's date
2015-03-18
Book of congress proceedings
ICIT 2015 - International Conference on Industrial Technology
First page
3058
Last page
3063
Project funding
Advanced Wide Band Gap Semiconductor Devices for Rational Use of Energy (RUE)
Repository
http://hdl.handle.net/2117/28094 Open in new window
Abstract
This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental te...
Citation
Nicolas, J. [et al.]. Efficiency comparison between SiC- and Si-based active neutral-point clamped converters. A: IEEE International Conference on Industrial Technology. "ICIT 2015 - International Conference on Industrial Technology". Sevilla: 2015, p. 3058-3063.
Keywords
SiC MOSFET, SiC technology, active neutral-point clamped, efficiency, multilevel conversion, wide band gap
Group of research
GREP - Power Electronics Research Group
PERC-UPC - Power Electronics Research Centre

Participants