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Refueling: Preventing wire degradation due to electromigration

Author
Abella, J.; Vera, F.J.; Unsal, O.; Ergin, O.; Gonzalez, A.; Tschanz, J. W.
Type of activity
Journal article
Journal
IEEE micro
Date of publication
2008-12
Volume
28
Number
6
First page
37
Last page
46
DOI
https://doi.org/10.1109/MM.2008.92 Open in new window
Repository
http://hdl.handle.net/2117/101134 Open in new window
URL
http://ieeexplore.ieee.org/document/4731173/ Open in new window
Abstract
Electromigration is a major source of wire and via failure. Refueling undoes EM for bidirectional wires and power/ground grids-some of a chip's most vulnerable wires. Refueling exploits EM's self-healing effect by balancing the amount of current flowing in both directions of a wire. It can significantly extend a wire's lifetime while reducing the chip area devoted to wires.
Citation
Abella, J., Vera, F.J., Unsal, O., Ergin, O., Gonzalez, A., Tschanz, J. W. Refueling: Preventing wire degradation due to electromigration. "IEEE micro", Desembre 2008, vol. 28, núm. 6, p. 37-46.
Keywords
Electromigration, Failure analysis
Group of research
ARCO - Microarchitecture and Compilers

Participants

  • Abella Ferrer, Jaume  (author)
  • Vera Rivera, Francisco Javier  (author)
  • Unsal, Osman Sabri  (author)
  • Ergin, Oguz  (author)
  • Gonzalez Colas, Antonio Maria  (author)
  • Tschanz, James W.  (author)

Attachments