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Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells

Author
Lopez, G.; Ortega, P.; Martin, I.; Voz, C.; Morales, A.; Orpella, A.; Alcubilla, R.
Type of activity
Journal article
Journal
Energy procedia
Date of publication
2015-08-28
Volume
77
First page
752
Last page
758
DOI
https://doi.org/10.1016/j.egypro.2015.07.106 Open in new window
Repository
http://hdl.handle.net/2117/84884 Open in new window
URL
https://www.sciencedirect.com/science/article/pii/S1876610215008747 Open in new window
Abstract
Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as dopant sources to create highly-doped regions and as passivating layers. In particular, we use phosphorus-doped silicon carbide stacks (a-SiCx (n)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layer deposited by atomic layer deposition ...
Citation
Lopez, G., Ortega, P., Martin, I., Voz, C., Morales, A., Orpella, A., Alcubilla, R. Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells. "Energy procedia", 28 Agost 2015, vol. 77, p. 752-758.
Keywords
IBC-BJ, Laser doping, c-Si solar cells, selective emitter
Group of research
MNT - Micro and Nanotechnologies Research Group

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