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Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure

Author
Kichou, S.; Silvestre, S.; Nofuentes Garrido, Gustavo; Torres-Ramirez, M.; Chouder, A.; Guasch, D.
Type of activity
Journal article
Journal
Data in brief
Date of publication
2016-06-01
Volume
7
First page
366
Last page
371
DOI
https://doi.org/10.1016/j.dib.2016.02.055 Open in new window
Repository
http://hdl.handle.net/2117/88794 Open in new window
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4781922/ Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S2352340916300774 Open in new window
Abstract
Four years'behavioraldataofthin-film single junction amorphous silicon (a-Si)photovoltaic(PV)modules installed in a relatively dry and sunny inland site with aContinental-Mediterranean climate (in thecityofJaén,Spain)are presented in this article.The shared data contributes to clarify how the Light Induced Degradation(LID) impacts the output power generated by the PV array,especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this ...
Citation
Kichou, S., Silvestre, S., Nofuentes Garrido, Gustavo, Torres-Ramirez, M., Chouder, A., Guasch, D. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure. "Data in Brief", 01 Juny 2016, vol. 7, p. 366-371.
Keywords
Light-induced degradation(LID), Photovoltaic systems, Stabilization period, a-Si PV module degradation analysis, a-Si PVmodules
Group of research
BAMPLA - Design and Evaluation of Broadband Networks and Services
MNT - Micro and Nanotechnologies Research Group

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