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A novel EMI reduction design technique in IGBT gate driver for turnon switching mode

Author
Ghorbani, H.; Sala, V.; Paredes, A.; Romeral, L.
Type of activity
Presentation of work at congresses
Name of edition
18th European Conference on Power Electronics and Applications
Date of publication
2016
Presentation's date
2016-09-07
Book of congress proceedings
EPE 2016: ECCE Europe, 18th European Conference on Power Electronics and Applications; Karlsruhe, Germany, 5-9 September, 2016
First page
1
Last page
7
DOI
https://doi.org/10.1109/EPE.2016.7695436 Open in new window
Project funding
High Efficiency Powertrain for Electric Vehicle based on the latest technologies of synchronous motors and silicon carbide power converters
URL
http://ieeexplore.ieee.org/document/7695436/ Open in new window
Abstract
This paper proposes a novel insulated gate bipolar transistor (IGBT) gate driver. The new gate driver (GD) has positive effect on the injected gate current to enhance the IGBT switching mechanism. The approach is based on the Posicast control method. The simple structure is the most important advantage of this feedforward controller. The main objective is to improve turn-on switching transients without harmful effect on the IGBT efficiency. The electromagnetic interface (EMI) reduction has been ...
Keywords
«Insulated gate bipolar transistor (IGBT) » «Active gate control (AGC) » «Posicast controller» «Electromagnetic interface (EMI) »
Group of research
MCIA - Motion Control and Industrial Applications Research Group
PERC-UPC - Power Electronics Research Centre

Participants