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Charge trapping control in MOS capacitors

Author
Dominguez, M.; Bheesayagari, C.; Gorreta, S.; Lopez, G.; Martin, I.; Blokhina, E.; Pons, J.
Type of activity
Journal article
Journal
IEEE transactions on industrial electronics
Date of publication
2016-12-26
Volume
64
Number
99
First page
1
Last page
7
DOI
https://doi.org/10.1109/TIE.2016.2645159 Open in new window
Repository
http://hdl.handle.net/2117/100877 Open in new window
URL
http://ieeexplore.ieee.org/document/7797504/ Open in new window
Abstract
This paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and adequate voltage excitations are generated by a feedback loop to place the C-V curve at the desired target position. Experimental results are presented for a n-type c-Si MOS capacitor made with silicon dioxide. It is shown that with this approach it is possible to shift horizontally...
Citation
Dominguez, M., Bheesayagari, C., Gorreta, S., Lopez, G., Martin, I., Blokhina, E., Pons, J. Charge trapping control in MOS capacitors. "IEEE transactions on industrial electronics", 26 Desembre 2016, vol. PP, núm. 99, p. 1-7.
Keywords
Capacitance, Capacitance measurement, Capacitance-voltage characteristics, Charge carrier processes, Feedback loop, MOS capacitors, Voltage measurement
Group of research
MNT - Micro and Nanotechnologies Research Group

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