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A novel active gate driver for silicon carbide MOSFET

Author
Paredes, A.; Sala, V.; Ghorbani, H.; Romeral, L.
Type of activity
Presentation of work at congresses
Name of edition
42nd Annual Conference of the IEEE Industrial Electronics Society
Date of publication
2016
Presentation's date
2017-02-24
Book of congress proceedings
Proceedings of the IECON2016: 42nd annual conference of the Industrial Electronics Society: Florence (Italy), October 24-27, 2016
First page
3172
Last page
3177
DOI
https://doi.org/10.1109/IECON.2016.7793222 Open in new window
URL
http://ieeexplore.ieee.org/document/7793222/ Open in new window
Abstract
A novel active gate driver (AGD) for silicon carbide (SiC) MOSFET is studied in this paper. The gate driver (GD) increases the gate resistance value during the voltage plateau area of the gate-source voltage, in both turn-on and turn-off transitions. The proposed AGD is validated in both simulation and experimental environments and in hard-switching conditions. The simulation is evaluated in MATLAB/Simulink with 100 kHz of switching frequency and 600 V of dc-bus, whereas, the experimental part w...
Keywords
Active gate driver, Silicon carbide, Switching losses
Group of research
MCIA - Motion Control and Industrial Applications Research Group
PERC-UPC - Power Electronics Research Centre

Participants