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Performance of a new gate drive controller for improving IGBT switching trajectory

Author
Ghorbani, H.; Sala, V.; Paredes, A.; Romeral, L.
Type of activity
Presentation of work at congresses
Name of edition
42th Annual Conference of the IEEE Industrial Electronics Society
Date of publication
2016
Presentation's date
2016-10-24
Book of congress proceedings
Proceedings of the IECON2016: 42nd annual conference of the Industrial Electronics Society: Florence (Italy), October 24-27, 2016
First page
3547
Last page
3551
DOI
https://doi.org/10.1109/IECON.2016.7793741 Open in new window
URL
http://ieeexplore.ieee.org/document/7793741/ Open in new window
Abstract
This paper presents a new active gate control (AGC) approach for improving the switching behavior of insulated gate bipolar transistors (IGBTs). The proposed controller is applied on the gate driver (GD) of IGBT, which is based on Posicast control method. The reduction of stress in transient conditions without harmful effect on the efficiency is the main objective of this research that is accomplished by a simple feed-forward controller. The effectiveness of the proposed gate drive controller ...
Keywords
Active gate drive, IGBT, Posicast control
Group of research
MCIA - Motion Control and Industrial Applications Research Group
PERC-UPC - Power Electronics Research Centre

Participants