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Active charge collection strategy for radiation environment at device level

Author
Calomarde, A.; Amat, E.; Rubio, A.; Moll, F.; Gamiz, F.
Type of activity
Presentation of work at congresses
Name of edition
RADECS 2016
Date of publication
2016
Presentation's date
2016-09-21
Book of congress proceedings
Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on
DOI
https://doi.org/10.1109/RADECS.2016.8093155 Open in new window
Abstract
This work proposes a new methodology to improve the charge collection of an impacting ion in a FinFET in order to avoid this charge to affect device sensitive nodes. An internal electric field drives the charge generated by the ion track out of the sensitive device terminals. The simulations performed with TCAD tools in 22nm FinFET devices show that the amount of charge collected by these terminals can be reduced up to 37% by adopting the introduced methodology
Keywords
Charge Collection, Multiple Bit Upset, Single Bit Upset, Single Event Effects, Single Event Upset, Soft Error
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants