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Author’s reply to “Comments on ‘optimization of a compact I–V model for graphene FETs: extending parameter scalability for circuit design exploration’ ” S. Frégonèse and T. Zimmer

Autor
Iannazzo, M.; Lemme, M.; Alarcon, E.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on electron devices
Data de publicació
2016-05
Volum
63
Número
5
Pàgina inicial
2226
Pàgina final
2226
DOI
https://doi.org/10.1109/TED.2016.2546439 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/document/7448391/ Obrir en finestra nova
Resum
We appreciate the careful analysis and comments by Frégonèse and Zimmer, where they show that the model proposed, accurately reproduces experimental data from graphene FETs (GFETs) when an appropriate smoothing factor is used. The authors have proposed an extension of this model by Frégonèse et al. with an exact calculation of a denominator. We compared the model extension with the original work. Unfortunately, we did not use a suitable smoothing factor in our comparison, which lead to a str...
Paraules clau
C, Circuit design exploration, Compact I-V model, GFET compact-model, Graphene FET, Parameter scalability, Smoothing factor
Grup de recerca
EPIC - Energy Processing and Integrated Circuits
PERC-UPC - Centre de Recerca d'Electrònica de Potència UPC

Participants