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Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications

Author
Nunes, D.; Moll, F.; Valtchev, S.
Type of activity
Journal article
Journal
IEEE transactions on very large scale integration (VLSI) systems
Date of publication
2017-03-01
Volume
25
Number
3
First page
988
Last page
997
DOI
https://doi.org/10.1109/TVLSI.2016.2617203 Open in new window
Repository
http://hdl.handle.net/2117/102943 Open in new window
URL
http://ieeexplore.ieee.org/document/7725525/ Open in new window
Abstract
In this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption. Compared with conventional thermionic technologies, the improved electrical characteristics of TFET devices are expected to increase the power conversion efficiency of front-end charge pumps and rectifiers powered at sub-µW power levels. However, under reverse bias conditions the TFET device presents particular elec...
Citation
Nunes, D., Moll, F., Valtchev, S. Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications. "IEEE transactions on very large scale integration (VLSI) systems", 1 Març 2017, vol. 25, núm. 3, p. 988-997.
Keywords
Charge pump, energy harvesting, passive rectifier, thermogenerator, tunnel field-effect transistor (TFET), ultralow power
Group of research
HIPICS - High Performance Integrated Circuits and Systems

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