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Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation

Author
Rana, M.; Canal, R.; Amat, E.; Rubio, A.
Type of activity
Journal article
Journal
IEEE transactions on device and materials reliability
Date of publication
2017-03-01
Volume
17
Number
1
First page
42
Last page
51
DOI
https://doi.org/10.1109/TDMR.2017.2667619 Open in new window
Repository
http://hdl.handle.net/2117/103076 Open in new window
URL
http://ieeexplore.ieee.org/document/7849148/ Open in new window
Abstract
Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines the minimum-energy operation point of 2T and 3T1D e-DRAM gain cells at the 32-nm technology node with different design points: up-sizing transistors, using high- V th transistors, read...
Citation
Rana, M., Canal, R., Amat, E., Rubio, A. Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation. "IEEE transactions on device and materials reliability", 1 Març 2017, vol. 17, núm. 1, p. 42-51.
Keywords
Circuit simulation, Memory, Metamodeling, Robustness, SDRDM, Semiconductor memory, Threshold voltage
Group of research
ARCO - Microarchitecture and Compilers
HIPICS - High Performance Integrated Circuits and Systems
VIRTUOS - Virtualisation and Operating Systems

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