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1-D memristor networks as ternary storage cells

Author
Vourkas, I.; Abusleme, A.; Sirakoulis, G.; Rubio, A.
Type of activity
Presentation of work at congresses
Name of edition
15th International Workshop on Cellular Nanoscale Networks and their Applications
Date of publication
2016
Presentation's date
2016-08-24
Book of congress proceedings
CNNA 2016; 15th International Workshop on Cellular Nanoscale Networks and their Applications
First page
101
Last page
102
URL
http://eeexplore.ieee.org/document/7827978/ Open in new window
Abstract
Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great retention and switching speed but still poor controllability. To this end, in this work we use one-dimensional (1-D) networks of anti-serially connected threshold-type memristors as means to to create voltage-controlled ternary memristive switches. We demonstrate that the numb...
Keywords
Memristor network, Memristors, Mult-bit storage, Neuromprphic, Resistive RAM, Resistive switching, Ternaru logic
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants

  • Vourkas, Ioannis  (author and speaker )
  • Abusleme, Angel  (author and speaker )
  • Sirakoulis, Georgios  (author and speaker )
  • Rubio Sola, Jose Antonio  (author and speaker )