Loading...
Loading...

Go to the content (press return)

Recombination processes in passivated boron-implanted black silicon emitters

Author
von Gastrow, G.; Ortega, P.; Alcubilla, R.; Husein, S.; Nietzold, T.; Bertoni, M.; Savin, H.
Type of activity
Journal article
Journal
Journal of applied physics
Date of publication
2017-05-14
Volume
121
Number
18
First page
185706-1
Last page
185706-7
DOI
https://doi.org/10.1063/1.4983297 Open in new window
Repository
http://hdl.handle.net/2117/104958 Open in new window
URL
http://aip.scitation.org/doi/10.1063/1.4983297 Open in new window
Abstract
In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the s...
Citation
von Gastrow, G., Ortega, P., Alcubilla, R., Husein, S., Nietzold, T., Bertoni, M., Savin, H. Recombination processes in passivated boron-implanted black silicon emitters. "Journal of applied physics", 14 Maig 2017, vol. 121, núm. 18, p. 185706-1-185706-7.
Keywords
High-efficiency solar cells, Ion-implanted black silicon emitters, Passivated boron-implanted black silicon emitters, Recombination processes, Surface nanostructuring, bSi emmitters
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants

Attachments