Loading...
Loading...

Go to the content (press return)

MOSFET degradation dependence on input signal power in a RF power amplifier

Author
Crespo, A.; Barajas, E.; Martin, J.; Mateo, D.; Aragones, X.; Rodríguez, R.; Nafría, M.
Type of activity
Journal article
Journal
Microelectronic engineering
Date of publication
2017-06-25
Volume
178
First page
289
Last page
292
DOI
https://doi.org/10.1016/j.mee.2017.05.021 Open in new window
Repository
http://hdl.handle.net/2117/106157 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S0167931717302186 Open in new window
Abstract
Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC MOSFETs and RF PA (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of the PMOS. Results suggest that transistors mobility reductio...
Citation
Crespo, A., Barajas, E., Martin, J., Mateo, D., Aragones, X., Rodríguez, R., Nafría, M. MOSFET degradation dependence on input signal power in a RF power amplifier. "Microelectronic engineering", 25 Juny 2017, vol. 178, p. 289-292.
Keywords
Aging, CMOS, MOSFET degradation, RF power amplifier, RF stress
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants

Attachments