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Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22%

Author
Calle, E.; Ortega, P.; Lopez, G.; Martin, I.; Carrió, D.; Masmitja, G.; Voz, C.; Orpella, A.; Puigdollers, J.; Alcubilla, R.
Type of activity
Presentation of work at congresses
Name of edition
11th Spanish Conference on Electron Devices
Date of publication
2017
Presentation's date
2017-02
Book of congress proceedings
11st Spanish Conference on Electron Devices (CDE 2017). Barcelona, 8-10 Frebuary 2017
First page
109
Last page
112
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
https://doi.org/10.1109/CDE.2017.7905230 Open in new window
Repository
http://hdl.handle.net/2117/108077 Open in new window
URL
http://ieeexplore.ieee.org/document/7905230/ Open in new window
Abstract
In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, with outstanding front surface passivation using atomic layer deposited Al2O3 films over random pyramids surfaces. Cells include a selective phosphorous n++ emitter in order to improve contact resistance and simultaneously reduce recombination current density. Fabricated devic...
Citation
Calle, E., Ortega, P., Lopez, G., Martin, I., Carrió, D., Masmitja, G., Voz, C., Orpella, A., Puigdollers, J., Alcubilla, R. Interdigitated back contacted c-Si(p) solar cells with photovoltaic efficiencies beyond 22%. A: Spanish Conference on Electron Devices. "11st Spanish Conference on Electron Devices (CDE 2017). Barcelona, 8-10 Frebuary 2017". Barcelona: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 109-112.
Keywords
ALD Al2O3, Crystalline silicon, High efficiency, Interdigitated back-contacted solar cell, Passivation
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants