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Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations

Author
Barajas, E.; Mateo, D.; Aragones, X.; Crespo, A.; Rodríguez, R.; Martin, J.; Nafría, M.
Type of activity
Presentation of work at congresses
Name of edition
30th International Conference of Microelectronic Test Structures
Date of publication
2017
Presentation's date
2017-03-29
Book of congress proceedings
2017 IEEE 30th International Conference of Microelectronic Test Structures (ICMTS): March 27-30, 2017: Grenoble, France
First page
1
Last page
3
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
https://doi.org/10.1109/ICMTS.2017.7954272 Open in new window
Repository
http://hdl.handle.net/2117/107375 Open in new window
URL
http://ieeexplore.ieee.org.recursos.biblioteca.upc.edu/document/7954272/ Open in new window
Abstract
This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation between the degradation of circuit's RF performances and those of its individual devices parameters. The test structure, measurement set-up and procedure are described in detail.
Citation
Barajas, E., Mateo, D., Aragones, X., Crespo, A., Rodríguez, R., Martin, J., Nafría, M. Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations. A: International Conference of Microelectronic Test Structures. "2017 IEEE 30th International Conference of Microelectronic Test Structures (ICMTS): March 27-30, 2017: Grenoble, France". Grenoble: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-3.
Keywords
Ageing, CMOS integrated circuits, Integrated circuit design, Integrated circuit testing, Radiofrequency power amplifiers
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants