This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation between the degradation of circuit's RF performances and those of its individual devices parameters. The test structure, measurement set-up and procedure are described in detail.
Barajas, E., Mateo, D., Aragones, X., Crespo, A., Rodríguez, R., Martin, J., Nafría, M. Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations. A: International Conference of Microelectronic Test Structures. "2017 IEEE 30th International Conference of Microelectronic Test Structures (ICMTS): March 27-30, 2017: Grenoble, France". Grenoble: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-3.