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Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells

Author
Marin-Martinez, J.; Rodriguez, R.; Nafría, M.; Torrents, G.; Bota, S.A.; Segura, J.; Moll, F.; Rubio, A.
Type of activity
Presentation of work at congresses
Name of edition
14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design
Date of publication
2017
Presentation's date
2017-06-15
Book of congress proceedings
SMACD 2017: 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design: 12th-15th June 2017: Giardini Naxos, Taormina, Itlaly
First page
1
Last page
4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
https://doi.org/10.1109/SMACD.2017.7981610 Open in new window
Project funding
Multilevel approach to the reliability-aware design of analog and digital integrated circuits
Repository
http://hdl.handle.net/2117/107030 Open in new window
URL
http://ieeexplore.ieee.org/abstract/document/7981610/ Open in new window
Abstract
Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phase
Citation
Martinez, J., Rodriguez, R., Nafria, M., Torrents, G., Bota, S.A., Segura, J., Moll, F., Rubio, A. Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells. A: International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. "SMACD 2017: 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design: 12th-15th June 2017: Giardini Naxos, Taormina, Itlaly". Giardini Naxos, Taormina: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-4.
Keywords
Random Telegraph Noise, SRAM, characterization, modeling, variability
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants

  • Marin Martinez, Jesús  (author and speaker )
  • Rodriguez, Rosa  (author and speaker )
  • Nafría Maqueda, Montserrat  (author and speaker )
  • Torrents, Gabriel  (author and speaker )
  • Bota, Sebastian A .  (author and speaker )
  • Segura, Jaume  (author and speaker )
  • Moll Echeto, Francesc de Borja  (author and speaker )
  • Rubio Sola, Jose Antonio  (author and speaker )