Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides
a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and
physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory
write operations and should therefore be taken into account during the memory design phase
Martinez, J., Rodriguez, R., Nafria, M., Torrents, G., Bota, S.A., Segura, J., Moll, F., Rubio, A. Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells. A: International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. "SMACD 2017: 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design: 12th-15th June 2017: Giardini Naxos, Taormina, Itlaly". Giardini Naxos, Taormina: Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-4.