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Curvature of BEOL cantilevers in CMOS-MEMS processes

Author
Valle, J.; Fernández, D.; Madrenas, J.; Barrachina, L.
Type of activity
Journal article
Journal
Journal of microelectromechanical systems
Date of publication
2017-08-01
Volume
26
Number
4
First page
895
Last page
909
DOI
https://doi.org/10.1109/JMEMS.2017.2695571 Open in new window
Repository
http://hdl.handle.net/2117/115412 Open in new window
URL
http://ieeexplore.ieee.org/document/7924353 Open in new window
Abstract
This paper presents the curvature characterization results of released back-end-of-line 5 µm-wide cantilevers for two different 0.18-µm 1P6M complementary metal-oxide semiconductor microelectromechanical systems processes. Results from different runs and lots from each foundry are presented. The methodology and accuracy of the characterization approach, based on optical measurements of test cantilever curvature, are also discussed. Special emphasis is given to the curvature average and variabi...
Citation
Valle, J.J., Méndez Fernández, Daniel, Madrenas, J., Barrachina, L. Curvature of BEOL cantilevers in CMOS-MEMS processes. "Journal of microelectromechanical systems", 1 Agost 2017, vol. 26, núm. 4, p. 895-909.
Keywords
Bending stiffness, Complementary metal-oxide semiconductor microelectromechanical systems (CMOS-MEMS), Curvature, Stacks, Temperature, Test cantilevers
Group of research
ISSET - Integrated Smart Sensors and Health Technologies

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