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CMOS-MEMS resonant pressure sensors: optimization and validation through comparative analysis

Author
Banerji, S.; Michalik, P.; Fernández, D.; Madrenas, J.; Mola, A.; Montanyà, J.
Type of activity
Journal article
Journal
Microsystem technologies
Date of publication
2017-09-01
Volume
23
Number
9
First page
3909
Last page
3925
DOI
https://doi.org/10.1007/s00542-016-2878-3 Open in new window
Repository
http://hdl.handle.net/2117/115081 Open in new window
URL
https://link.springer.com/article/10.1007%2Fs00542-016-2878-3 Open in new window
Abstract
An optimized CMOS-MEMS resonant pressure sensor with enhanced sensitivity at atmospheric pressure has been reported in this paper. The presented work reports modeling and characterization of a resonant pressure sensor, based on the variation of the quality factor with pressure. The relevant regimes of air flow have been determined by the Knudsen number, which is the ratio of the mean free path of the gas molecule to the characteristic length of the device. The sensitivity has been monitored for ...
Citation
Banerji, S., Michalik, P., Méndez Fernández, Daniel, Madrenas, J., Mola, A., Montanyà, J. CMOS-MEMS resonant pressure sensors: optimization and validation through comparative analysis. "Microsystem technologies", 1 Setembre 2017, vol. 23, núm. 9, p. 3909-3925.
Keywords
CMOS-MEMS, Knudsen number, Optimization, Perforated plate, Quality factor, Resonant pressure sensor, Squeeze film damping
Group of research
ISSET - Integrated Smart Sensors and Health Technologies

Participants

  • Banerji, Saoni  (author)
  • Michalik, Piotr Jozef  (author)
  • Fernández Martínez, Daniel  (author)
  • Madrenas Boadas, Jordi  (author)
  • Mola, Albert  (author)
  • Montanyà, Josep  (author)

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