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Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction

Author
Reverter, F.; Perpiñà, X.; Barajas, E.; León, J.; Vellvehi, M.; Jordà, X.; Altet, J.
Type of activity
Journal article
Journal
Sensors and actuators A. Physical
Date of publication
2017-09-01
Volume
264
First page
157
Last page
164
DOI
https://doi.org/10.1016/j.sna.2017.07.057 Open in new window
Repository
http://hdl.handle.net/2117/116555 Open in new window
URL
http://linkinghub.elsevier.com/retrieve/pii/S0924424717302467 Open in new window
Abstract
© 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is monolithically integrated with the circuit under test (CUT) and then monitors by thermal means the DC power dissipated by the CUT, which carries high-frequency electrical information. After explaining the theory behind this testing approach, the paper demonstrates the feasibility...
Citation
Reverter, F., Perpiñà, X., Barajas, E., León, J., Vellvehi, M., Jordà, X., Altet, J. Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction. "Sensors and actuators A. Physical", 1 Setembre 2017, vol. 264, p. 157-164.
Keywords
IC testing, MOSFET, RF testing, Temperature sensor, Thermal coupling, Thermal testing
Group of research
HIPICS - High Performance Integrated Circuits and Systems
e-CAT - Electronic Circuits and Transducers

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