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Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement

Author
Ghorbani, H.; Sala, V.; Paredes, A.; Romeral, L.
Type of activity
Journal article
Journal
Microelectronics reliability
Date of publication
2018-01-01
Volume
80
First page
230
Last page
240
DOI
https://doi.org/10.1016/j.microrel.2017.12.008 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S0026271417305668?via%3Dihub Open in new window
Abstract
© 2017 Elsevier LtdThis paper proposes an active gate drive method based on a feedforward control for turn-on condition in IGBTs. The transient improvement with minimum undesirable effect on the efficiency is the main objective of this research. The new gate driver (GD) improves the trade-off between switching loss and device stress at the turn-on condition, without getting feedback from the output. The operation principle and implementation of the controller in the GD are presented. The effect...
Keywords
Electromagnetic interference (EMI), Gate driver (GD), IGBT, Switching losses
Group of research
MCIA - Motion Control and Industrial Applications Research Group
PERC-UPC - Power Electronics Research Centre

Participants