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Nonlinear effects of SiO2 layers in bulk acoustic wave resonators

Author
Collado, J.; Mateu, J.; Garcia, D.; Perea-Robles, R.; Hueltes, A.; Kreuzer, S.; Aigner, R.
Type of activity
Journal article
Journal
IEEE transactions on microwave theory and techniques
Date of publication
2017-12-29
Volume
66
Number
4
First page
1773
Last page
1779
DOI
https://doi.org/10.1109/TMTT.2017.2783377 Open in new window
Repository
http://hdl.handle.net/2117/116108 Open in new window
URL
http://ieeexplore.ieee.org/document/8241800/ Open in new window
Abstract
This paper presents the development of a comprehensive distributed circuit model to account for the existing nonlinear effects in bulk acoustic wave (BAW) resonators. The comprehensiveness of the model and its distributed implementation allow for the inclusion of the nonlinear effects occurring in any layer of the BAW configuration, not only the piezoelectric layer. The model has been applied to evaluate the nonlinear contribution of the piezoelectric layer and silicon dioxide (SiO₂) laye...
Citation
Collado, J., Mateu, J., Garcia, D., Perea-Robles, R., Hueltes, A., Kreuzer, S., Aigner, R. Nonlinear effects of SiO2 layers in bulk acoustic wave resonators. "IEEE transactions on microwave theory and techniques", 29 Desembre 2017, vol. 66, núm. 4, p. 1773-1779.
Keywords
Acoustic waves, Bulk acoustic wave (BAW), Harmonic analysis, Integrated circuit modeling, Mathematical model, Resonators, SiO2, Transmission line measurements, electroacoustic, nonlinearities, second harmonic (H2), third harmonic (H3), third-order intermodulation (IMD3) product.
Group of research
CSC - Components and Systems for Communications Research Group

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