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Flexoelectric MEMS: towards an electromechanical strain diode

Author
Bhaskar, U.; Banerjee, N.; Abdollahi, A.; Solanas, E.; Rijnders, G.; Catalan, G.
Type of activity
Journal article
Journal
Nanoscale
Date of publication
2016
Volume
8
Number
3
First page
1293
Last page
1298
DOI
https://doi.org/10.1039/C5NR06514C Open in new window
Repository
http://hdl.handle.net/2117/116677 Open in new window
URL
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C5NR06514C#!divAbstract Open in new window
Abstract
Piezoelectricity and flexoelectricity are two independent but not incompatible forms of electromechanical response exhibited by nanoscale ferroelectrics. Here, we show that flexoelectricity can either enhance or suppress the piezoelectric response of the cantilever depending on the ferroelectric polarity and lead to a diode-like asymmetric (two-state) electromechanical response.
Citation
Bhaskar, U., Banerjee, N., Abdollahi, A., Solanas, E., Rijnders, G., Catalan, G. Flexoelectric MEMS: towards an electromechanical strain diode. "Nanoscale", 2016, vol. 8, núm. 3, p. 1293-1298.
Group of research
LACÀN - Numerical Methods for Applied Sciences and Engineering

Participants

  • Bhaskar, Umesh Kumar  (author)
  • Banerjee, Nirupam  (author)
  • Abdollahi Hosnijeh, Amir  (author)
  • Solanas, E.  (author)
  • Rijnders, Guus  (author)
  • Catalan, Gustau  (author)

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