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Switching trajectory improvement of SiC MOSFET devices using a feedback gate driver

Author
Paredes, A.; Fernández, E.; Sala, V.; Ghorbani, H.; Romeral, L.; Fernandez, E.
Type of activity
Presentation of work at congresses
Name of edition
19th International Conference on Industrial Technology
Date of publication
2018
Presentation's date
2018-02-22
Book of congress proceedings
2018 IEEE International Conference on Industrial Technology (ICIT): Lyon, France: February 19-22, 2018: proceedings
First page
847
Last page
852
DOI
https://doi.org/10.1109/ICIT.2018.8352288 Open in new window
URL
https://ieeexplore.ieee.org/document/8352288/ Open in new window
Abstract
In this paper, a feedback active gate driver (AGD) based on a multistage technique for improving the switching trajectory of silicon carbide (SiC) MOSFET devices is presented. The main purpose of this technique is to reduce the oscillations and overshoot in high-frequency with low switching losses. Besides, the gate driver is designed considering the current load variations with simple circuit structure. An AGD validation has been developed by using simulations. The results have shown the behavi...
Keywords
Feedback, Feedback gate driver, Gate drivers, High frequency HF, High-frequency applications, MOSFET devices, Oscillations, Power Losses, Power-losses, Silicon carbide, Silicon carbide MOSFET Electromagnetic pulse, Silicon carbide MOSFETs, Simple circuits, Switching, Switching loss
Group of research
InSup - Surface Interaction in Bioengineering and Materials Science Research Group
MCIA - Motion Control and Industrial Applications Research Group
PERC-UPC - Power Electronics Research Centre

Participants