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Design of broadband CNFET LNA based on extracted I-V closed-form equation

Author
Saberkari, A.; Khorgami, O.; Bagheri, J.; Madec, M.; Hosseini, S.; Alarcon, E.
Type of activity
Journal article
Journal
IEEE transactions on nanotechnology
Date of publication
2018-04-02
Volume
17
Number
4
First page
731
Last page
742
DOI
https://doi.org/10.1109/TNANO.2018.2822599 Open in new window
Repository
http://hdl.handle.net/2117/118186 Open in new window
URL
https://ieeexplore.ieee.org/document/8329520/ Open in new window
Abstract
A procedure of extracting a closed-form user-friendly I-V equation for short channel carbon nanotube field-effect transistors (CNFET) in the saturation region is presented by employing a relation between CNFET parameters meeting the experimental results. The methodology is based on the Stanford model and ballistic relation of one channel CNFET. In this regard, the ballistic relation is simplified to a closed-form I-V equation, and then, the parameters are estimated through the fitting algorithm ...
Citation
Saberkari, A., Khorgami, O., Bagheri, J., Madec, M., Hosseini, S., Alarcon, E. Design of broadband CNFET LNA based on extracted I-V closed-form equation. "IEEE transactions on nanotechnology", 31 Març 2018, vol. 17, núm. 4, p. 731-742.
Keywords
Carbon nanotube (CNT), Closed-form I-V equation, Field-effect transistor (FET), Low noise amplifier (LNA), Nanoelectronics, Noise figure (NF), Radio frequency (RF), Short channel
Group of research
EPIC - Energy Processing and Integrated Circuits
PERC-UPC - Power Electronics Research Centre

Participants

  • Saberkari, Alireza  (author)
  • Khorgami, Omid  (author)
  • Bagheri, Javad  (author)
  • Madec, Morgan  (author)
  • Hosseini Golgoo, Seyed Mohsen  (author)
  • Alarcon Cot, Eduardo Jose  (author)

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