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Enabling silicon-on-silicon photonics with pedestalled Mie resonators

Autor
Garin, M.; Solà, M.; Julian, A.; Ortega, P.
Tipus d'activitat
Article en revista
Revista
Nanoscale
Data de publicació
2018-07-19
Volum
10
Pàgina inicial
14406
Pàgina final
14413
DOI
https://doi.org/10.1039/C8NR02259C Obrir en finestra nova
Projecte finançador
Hacia la obtención de múltiples células monocristalinas de Silicio con 20% de eficiencia y menos de 20 µm de grosor a partir de una única oblea.
Superando el cuerpo negro. Absorción y emisión de luz en una microesfera de Silicio.
Repositori
http://hdl.handle.net/2117/121779 Obrir en finestra nova
URL
https://pubs.rsc.org/en/content/articlelanding/2018/nr/c8nr02259c#!divAbstract Obrir en finestra nova
Resum
High-refractive-index Mie resonators are regarded as promising building blocks for low-loss all-dielectric nanophotonic applications. To avoid the otherwise excessive damping and loss of symmetry such devices typically need to be implemented over a low-index substrate, which hampers their integration in many practical applications. In this paper we propose a new photonic structure consisting of silicon-on-silicon spheroidal-like resonators, each one supported by a slim silicon pedestal that make...
Citació
Garin, M., Solà, M., Julian, A., Ortega, P. Enabling silicon-on-silicon photonics with pedestalled Mie resonators. "Nanoscale", 19 Juliol 2018, vol. 10, p. 14406-14413.
Paraules clau
Metasurfaces, Mie resonators, crystalline silicon, silicon photonics, surface diffusion
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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