Carregant...
Carregant...

Vés al contingut (premeu Retorn)

Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

Autor
Reig, M.; Bagdziunas, G.; Ramanavicius, A.; Puigdollers, J.; Velasco, D.
Tipus d'activitat
Article en revista
Revista
Physical chemistry chemical physics
Data de publicació
2018-07-14
Volum
20
Número
26
Pàgina inicial
17889
Pàgina final
17898
DOI
https://doi.org/10.1039/c8cp02963f Obrir en finestra nova
Projecte finançador
Dispositivos híbridos de silicio/calcogenuro de capa delgada para tecnologias fotovoltaicos sostenibles de bajo coste y muy alta eficiencia
Repositori
http://hdl.handle.net/2117/121119 Obrir en finestra nova
URL
https://pubs.rsc.org/en/content/articlelanding/2018/cp/c8cp02963f#!divAbstract Obrir en finestra nova
Resum
Inspired by the excellent device performance of triindole-based semiconductors in electronic and optoelectronic devices, the relationship between the solid-state organization and the charge-transporting properties of an easily accessible series of triindole derivatives is reported herein. The vacuum-evaporated organic thin-film transistors (OTFTs) exhibited a non ideal behaviour with a double slope in the saturation curves. Moreover, the treatment of the gate insulator of the OTFT device with ei...
Citació
Reig, M., Bagdziunas, G., Ramanavicius, A., Puigdollers, J., Velasco, D. Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors. "Physical chemistry chemical physics", 14 Juliol 2018, vol. 20, núm. 26, p. 17889-17898.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants

  • Reig Canyelles, Marta  (autor)
  • Bagdziunas, Gintautas  (autor)
  • Ramanavicius, Arunas  (autor)
  • Puigdollers Gonzalez, Joaquin  (autor)
  • Velasco Castrillo, Maria Dolores  (autor)