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Defect states assisted charge conduction in Au/MoO3¿x/n-Si Schottky barrier diode

Autor
Mahato, S.; Voz, C.; Biswas, D.; Puigdollers, J.; Bhunia, S.
Tipus d'activitat
Article en revista
Revista
Materials Research Express
Data de publicació
2018-12-07
Volum
6
Número
3
Pàgina inicial
036303-1
Pàgina final
036301-8
DOI
https://doi.org/10.1088/2053-1591/aaf49f Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/125867 Obrir en finestra nova
URL
http://iopscience.iop.org/article/10.1088/2053-1591/aaf49f/pdf Obrir en finestra nova
Resum
Role of defect states of thermally evaporated molybdenum trioxide (MoO3-x) on electrical conductivity was investigated via low temperature current–voltage and capacitance–voltage measurements. To clarify the charge transport phenomena through MoO3-x, a 15 nm thin layer of MoO3-x film was used as an interface layer between gold and n-type Silicon (n-Si). The formation of an interface dipole between n-Si and MoO3-x exhibits a rectifying behaviour of Au/MoO3-x/n-Si Schottky barrier diode (SBDs)...
Citació
Mahato, S., Voz, C., Biswas, D., Puigdollers, J. Defect states assisted charge conduction in Au/MoO3¿x/n-Si Schottky barrier diode. "Materials Research Express", 7 Desembre 2018, vol. 6, núm. 3, p. 036301-1 / 036301-8
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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