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Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor

Author
Ros, E.; Puigdollers, J.; Ortega, P.; Voz, C.
Type of activity
Presentation of work at congresses
Name of edition
2019 Latin American Electron Devices Conference
Date of publication
2019
Presentation's date
2019-02-27
Book of congress proceedings
2019 Latin American Electron Devices Conference (LAEDC 2019): Armenia, Colombia: 24-27 February 2019
First page
1
Last page
4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
10.1109/LAED.2019.8714731
Project funding
Advanced Si/thin film chalcogenide hybrid technologies for sustainable, low cost and very high efficiency photovoltaics
Non-conventional silicon heterojunction solar cells
Repository
http://hdl.handle.net/2117/167067 Open in new window
URL
https://ieeexplore.ieee.org/document/8714731 Open in new window
Abstract
In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm2/V¿s) and on/off ratios above 105, the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed. © 2019 IEEE. Personal use of this material is permitted. Permis...
Citation
Ros, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. A: Latin American Electron Devices Conference. "2019 Latin American Electron Devices Conference (LAEDC 2019): Armenia, Colombia: 24-27 February 2019". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 1-4.
Keywords
NDR, Non ideal output, OTFT, Organic semiconductors
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants