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Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor
Ros, E.; Puigdollers, J.; Ortega, P.; Voz, C.
Type of activity
Presentation of work at congresses
Name of edition
2019 Latin American Electron Devices Conference
Date of publication
Book of congress proceedings
2019 Latin American Electron Devices Conference (LAEDC 2019): Armenia, Colombia: 24-27 February 2019
Institute of Electrical and Electronics Engineers (IEEE)
Advanced Si/thin film chalcogenide hybrid technologies for sustainable, low cost and very high efficiency photovoltaics Non-conventional silicon heterojunction solar cells
In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm2/V¿s) and on/off ratios above 105, the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.
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Ros, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. A: Latin American Electron Devices Conference. "2019 Latin American Electron Devices Conference (LAEDC 2019): Armenia, Colombia: 24-27 February 2019". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 1-4.
NDR, Non ideal output, OTFT, Organic semiconductors
Group of research
MNT - Micro and Nanotechnologies Research Group