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Impact of NBTI on EMC behaviours of CMOS inverter

Author
Fernandez-Garcia, R.; Berbel, N.; Gil, I.; Morata, M.
Type of activity
Presentation of work at congresses
Name of edition
Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility- EMC-ZURICH
Date of publication
2010
Presentation's date
2010-04-15
Book of congress proceedings
Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility- EMC-ZURICH
First page
1031
Last page
1034
Repository
http://hdl.handle.net/2117/7391 Open in new window
URL
http://www.emc-zurich.org/ Open in new window
Abstract
In this paper the Electromagnetic Robustness (EMR) of a CMOS inverter has been analyzed when the pFETs are submitted to negative bias temperature instability (NBTI). The impact of pFET and CMOS inverter has been experimentally quantified and the switching noise and electromagnetic susceptibility has been analyzed by means of simulation. The results show that NBTI reduces the switching noise whereas the EMI susceptibility is not modified.
Citation
Fernandez, R. [et al.]. Impact of NBTI on EMC behaviours of CMOS inverter. A: Asia-Pacific International Symposium on Electromagnetic Compatibility- EMC-ZURICH. "Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility- EMC-ZURICH". 2010, p. 1031-1034.
Group of research
Electromagnetic Compatibility (EMC); Widebandgap (WBG); Internal Activity; Feature Selective Validation (FSV); Spread Spectrum modulation; Reliability; Multilevel Converters; Fault detection;
PERC-UPC - Power Electronics Research Centre
RFEMC -

Participants