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Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor

Author
Ros, E.; Puigdollers, J.; Ortega, P.; Voz, C.
Type of activity
Journal article
Journal
IEEE Journal of the Electron Devices Society
Date of publication
2020-01-09
DOI
10.1109/JEDS.2020.2965213
Project funding
Advanced Si/thin film chalcogenide hybrid technologies for sustainable, low cost and very high efficiency photovoltaics
Non-conventional silicon heterojunction solar cells
Repository
http://hdl.handle.net/2117/175469 Open in new window
URL
https://ieeexplore.ieee.org/document/8954703/authors#authors Open in new window
Abstract
In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm 2 /V·s) and on/off ratios above 10 5 , the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed. © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE...
Citation
Ros, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. "IEEE Journal of the Electron Devices Society", 9 Gener 2020.
Keywords
Density of states, NDR, OTFT, Organic semiconductors
Group of research
MNT - Micro and Nanotechnologies Research Group