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Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch

Author
Heredia, J.; Ribó Pal, Miquel; Pradell, L.; Wipf, S.; Göritz, A.; Wietstruck, M.; Wipf, C.; Kaynak, M.
Type of activity
Journal article
Journal
Micromachines
Date of publication
2019-10-01
Volume
10
Number
10
First page
632: 1
Last page
632: 13
DOI
10.3390/mi10100632
Repository
http://hdl.handle.net/2117/186284 Open in new window
URL
https://www.mdpi.com/2072-666X/10/10/632 Open in new window
Abstract
A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise...
Citation
Heredia, J. [et al.]. Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch. "Micromachines", 1 Octubre 2019, vol. 10, núm. 10, p. 632: 1-632: 13.
Keywords
Frequency-reconfigurable LNA, Hetero junction bipolar transistor (HBT), Low-noise amplifier (LNA), Multimodal circuit, RF switch, SiGe BiCMOS
Group of research
CommSensLab-UPC - Centre Específic de Recerca en Comunicació i Detecció UPC
RF&MW - Laboratory of RF & microwave systems, devices and materials

Participants

  • Heredia, Julio  (author)
  • Ribó Pal, Miquel  (author)
  • Pradell Cara, Lluis  (author)
  • Wipf, Selin Tolunay  (author)
  • Göritz, Alexander  (author)
  • Wietstruck, Matthias  (author)
  • Wipf, Christian  (author)
  • Kaynak, Mehmet  (author)

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