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Influence of co-sputtered Ag:Al ultra-thin layers in transparent V2O5/Ag:Al/AZO hole-selective electrodes for silicon solar cells

Author
Tom, T.; Ros, E.; Asensi, J.M.; Andreu Batallé, Jordi; Bertomeu Balagueró, Joan; Puigdollers, J.; Voz, C.; López-Pintó, N.
Type of activity
Journal article
Journal
Materials
Date of publication
2020-10-31
Volume
13
Number
21
First page
4905:1
Last page
4905:16
DOI
10.3390/ma13214905
Project funding
Advanced Si/thin film chalcogenide hybrid technologies for sustainable, low cost and very high efficiency photovoltaics
Non-conventional silicon heterojunction solar cells
Selective contacts and active layes for energy devices
Repository
http://hdl.handle.net/2117/331211 Open in new window
URL
https://www.mdpi.com/1996-1944/13/21/4905 Open in new window
Abstract
As optoelectronic devices continue to improve, control over film thickness has become crucial, especially in applications that require ultra-thin films. A variety of undesired effects may arise depending on the specific growth mechanism of each material, for instance a percolation threshold thickness is present in Volmer-Webber growth of materials such as silver. In this paper, we explore the introduction of aluminum in silver films as a mechanism to grow ultrathin metallic films of high transpa...
Citation
Tom, T. [et al.]. Influence of co-sputtered Ag:Al ultra-thin layers in transparent V2O5/Ag:Al/AZO hole-selective electrodes for silicon solar cells. "Materials", 31 Octubre 2020, vol. 13, núm. 21, p. 4905:1-4905:16.
Keywords
Contacts, Heterojunctions, Silicon, Solar cells, Sputtering, Transition metal oxide, Transparent films
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants

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