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Defect depth-profiling in kesterite absorber by means of chemical etching and surface analysis

Author
Giraldo, S.; Calvo-Barrio, L.; Placidi, M.; Sánchez, Y.; Saucedo Silva, Edgardo; Jehl, Z.
Type of activity
Journal article
Journal
Applied surface science
Date of publication
2021-02-28
Volume
540
First page
148342:1
Last page
148342:8
DOI
10.1016/j.apsusc.2020.148342
Repository
http://hdl.handle.net/2117/344777 Open in new window
URL
https://www.sciencedirect.com/science/article/abs/pii/S0169433220330993 Open in new window
Abstract
A method to probe the depth morphology, defect profile and possible secondary phases in a thin film semiconductor is presented, taking a standard Kesterite film as an example. Using a top-down approach based on a previously reported controlled Methanol-Br2 chemical etching, well-defined slabs of a state of the art Kesterite absorber are fabricated. The analysis of their morphology both by Scanning Electron Microscopy and 3D optical Profilometry reveals the extent of a previously reported poor fi...
Citation
Giraldo, S. [et al.]. Defect depth-profiling in kesterite absorber by means of chemical etching and surface analysis. "Applied surface science", 28 Febrer 2021, vol. 540, p. 148342:1-148342:8.
Keywords
Chemical etching, Defect, Kesterite, Raman Spectroscopy, XPS
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants