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Ring oscillator switching noise under NBTI wearout

Author
Fernandez-Garcia, R.; Gil, I.; Ruiz, J.M.; Morata, M.
Type of activity
Presentation of work at congresses
Name of edition
EMC Europe 2011
Date of publication
2011
Presentation's date
2011-09
Book of congress proceedings
Proceedings EMC Europe 2011
First page
294
Last page
297
Repository
http://hdl.handle.net/2117/13934 Open in new window
URL
http://www.scopus.com/record/display.url?eid=2-s2.0-83155163813&origin=resultslist Open in new window
Abstract
In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified whereas CMOS ring oscillator frequency and the switching noise has been analysed by means of electrical full-model simulation. The results show that the impact on the electromagnetic compatibility behaviour increases with NBTI wearout. In this paper the switching noise of a CM...
Citation
Fernandez, R. [et al.]. Ring oscillator switching noise under NBTI wearout. A: International Symposium on Electromagnetic Compatibility (EMC Europe). "EMC Europe 2011". York: 2011, p. 294-297.
Keywords
CMOS circuits, EMC prediction, NBTI, Switching Noise
Group of research
RFEMC -

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