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A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors

Autor
Castañer, L.; Sureda, S.; Bardes, D.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
IEEE transactions on electron devices
Data de publicació
1994-03
Volum
41
Número
3
Pàgina inicial
454
Pàgina final
455
DOI
https://doi.org/10.1109/16.275236 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112401 Obrir en finestra nova
URL
http://ieeexplore.ieee.org/document/275236/?reload=true Obrir en finestra nova
Resum
A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon to the charge stored in the single crystal part of the emitter of a polysilicon emitter bipolar transistor is derived. The solution is based on an existing comprehensive model which takes into account the interfacial oxide and an arbitrary number of grains in the polysilicon layer. The emitter charge partition in polysilicon and single crystal emitter components is summarized in contour plots for c...
Citació
Castañer, L., Sureda, S., Bardes, D., Alcubilla, R. A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors. "IEEE transactions on electron devices", Març 1994, vol. 41, núm. 3, p. 454-455.
Paraules clau
Bipolar transistors, Elemental semiconductors, Minority carriers, Semiconductor device models, Silicon
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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