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Superposition solution for minority carrier current in the emitter of bipolar devices

Autor
Alcubilla, R.; Pons, J.; Castañer, L.
Tipus d'activitat
Article en revista
Revista
Solid-state electronics
Data de publicació
1991-10
Volum
35
Número
4
Pàgina inicial
529
Pàgina final
533
DOI
https://doi.org/10.1016/0038-1101(92)90116-T Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/003811019290116T Obrir en finestra nova
Resum
A solution, based on the superposition of zero-state and zero-input responses, of the minority carrier transport in the emitter of bipolar devices is presented. The recombination mechanisms in the volume and at the surface are shown to be connected to the two responses. The validity range and applicability conditions of such procedure are analyzed. As a consequence simpler analytical and numerical solutions (for the hole current in an N-type emitter) are obtained.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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