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Superposition solution for minority carrier current in the emitter of bipolar devices

Author
Alcubilla, R.; Pons, J.; Castañer, L.
Type of activity
Journal article
Journal
Solid-state electronics
Date of publication
1991-10
Volume
35
Number
4
First page
529
Last page
533
DOI
https://doi.org/10.1016/0038-1101(92)90116-T Open in new window
URL
https://www.sciencedirect.com/science/article/pii/003811019290116T Open in new window
Abstract
A solution, based on the superposition of zero-state and zero-input responses, of the minority carrier transport in the emitter of bipolar devices is presented. The recombination mechanisms in the volume and at the surface are shown to be connected to the two responses. The validity range and applicability conditions of such procedure are analyzed. As a consequence simpler analytical and numerical solutions (for the hole current in an N-type emitter) are obtained.
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants