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Shape effects on electromigration in VLSI interconnects

Autor
Gonzalez, J.; Rubio, A.
Tipus d'activitat
Article en revista
Revista
Microelectronics reliability
Data de publicació
1997-07
Volum
37
Número
7
Pàgina inicial
1073
Pàgina final
1078
DOI
https://doi.org/10.1016/S0026-2714(96)00269-7 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/24195 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0026271496002697 Obrir en finestra nova
Resum
The influence of the shape of VLSI interconnects on the lifetime due to electromigration is investigated. Simulations and experiments indicate that, in some cases, the right angle corners of the metal lines, widely interconnections layout of VLSI circuits, reduce the lifetime of such interconnects. Substitutions by more gradual, smaller angled corners improve electromigration lifetimes.
Citació
Gonzalez, J.; Rubio, A. Shape effects on electromigration in VLSI interconnects. "Microelectronics reliability", Juliol 1997, vol. 37, núm. 7, p. 1073-1078.
Grup de recerca
HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions

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