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Shape effects on electromigration in VLSI interconnects

Author
Gonzalez, J.; Rubio, A.
Type of activity
Journal article
Journal
Microelectronics reliability
Date of publication
1997-07
Volume
37
Number
7
First page
1073
Last page
1078
DOI
https://doi.org/10.1016/S0026-2714(96)00269-7 Open in new window
Repository
http://hdl.handle.net/2117/24195 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S0026271496002697 Open in new window
Abstract
The influence of the shape of VLSI interconnects on the lifetime due to electromigration is investigated. Simulations and experiments indicate that, in some cases, the right angle corners of the metal lines, widely interconnections layout of VLSI circuits, reduce the lifetime of such interconnects. Substitutions by more gradual, smaller angled corners improve electromigration lifetimes.
Citation
Gonzalez, J.; Rubio, A. Shape effects on electromigration in VLSI interconnects. "Microelectronics reliability", Juliol 1997, vol. 37, núm. 7, p. 1073-1078.
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants