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Electrical characterization of n-amorphous/p-crystalline silicon heterojunctions

Author
Marsal, L.; Pallares, J.; Correig, X.; Calderer, J.; Alcubilla, R.
Type of activity
Journal article
Journal
Journal of applied physics
Date of publication
1996-06
Volume
79
Number
11
First page
8493
Last page
8497
DOI
10.1063/1.362526
URL
https://aip.scitation.org/doi/10.1063/1.362526 Open in new window
Abstract
n-type amorphous silicon on p-type crystalline silicon heterojunction diodes were fabricated and electrically characterized. The a-Si:H film was deposited by plasma enhanced chemical vapor deposition. Electrical properties were investigated by capacitance–voltage and current–voltage measurements at different temperatures. The capacitance–voltage results confirm an abrupt heterojunction. Current–voltage characteristics show good rectifying properties (50000:1 at ±0.5 V). A detailed analy...
Keywords
Chemical compounds and components, Chemical elements, Chemical vapor deposition, Electrical characterization, Electrical properties and parameters, Electrostatics, Heterostructures, I-V characteristics, Solar cells
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants