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Onset of current oscillations in extrinsic semiconductors under dc voltage bias

Autor
Bonilla, L.; Rodriguez Cantalapiedra, I.; Bergman, M.; Teitsworth, S. W.
Tipus d'activitat
Article en revista
Revista
Semiconductor science and technology
Data de publicació
1994-04
Volum
9
Número
5
Pàgina inicial
599
Pàgina final
602
DOI
https://doi.org/10.1088/0268-1242/9/5S/054 Obrir en finestra nova
Resum
We present a model which describes the onset of current instabilities and space-charge domains in extrinsic semiconductors (especially p-Ge) under DC voltage bias. Just above the onset voltage for current instability we have found numerically small-amplitude fast oscillations due to the periodic motion of solitary waves which decay before reaching the receiving contact. For slightly larger applied voltages there is an abrupt and slightly hysteretic transition to slower large-amplitude solitary w...
Paraules clau
CHAOS, DYNAMICS, GERMANIUM, PHOTOCONDUCTORS, SPACE-CHARGE DOMAINS, SPATIAL MEASUREMENTS, SPONTANEOUS CURRENT INSTABILITIES, ULTRAPURE GE, WAVES
Grup de recerca
BIOCOM-SC - Grup de Biologia Computacional i Sistemes Complexos

Participants