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Solitary-wave conduction in p-type Ge under time dependent voltage bias

Autor
Bergmann, M. J.; Teitsworth, S. W.; Bonilla, L.; Rodriguez Cantalapiedra, I.
Tipus d'activitat
Article en revista
Revista
Physical review B: condensed matter and materials physics
Data de publicació
1996-01-15
Volum
53
Número
3
Pàgina inicial
1327
Pàgina final
1335
DOI
https://doi.org/10.1103/PhysRevB.53.1327 Obrir en finestra nova
Resum
We present the results of numerical simulations of a drift-diffusion model-including electric-field-dependent generation-recombination processes-for closely compensated p-type Ge at low temperature and under dc+ac and dc+noise voltage biases, with an Ohmic boundary condition. We observe frequency locking and quasiperiodicity under dc+ac bias, but do not find chaotic behavior for a uniform impurity profile. Noise-induced intermittent switching near the onset of solitary-wave conduction is compare...
Grup de recerca
BIOCOM-SC - Grup de Biologia Computacional i Sistemes Complexos

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