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Unipolar transport and shot noise in metal-semiconductor-metal structures

Author
Gomila, G.; Reggiani, L.; Rodriguez Cantalapiedra, I.
Type of activity
Journal article
Journal
Journal of applied physics
Date of publication
2003-01
Volume
93
Number
1
First page
375
Last page
383
DOI
https://doi.org/10.1063/1.1525863 Open in new window
URL
http://aip.scitation.org/doi/10.1063/1.1525863 Open in new window
Abstract
We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed in studying the whole range of carrier injection conditions going from low level injection, where the structure behaves as a linear resistor, to high level injection, where the structure behaves as a space charg...
Keywords
DIODES, JUNCTIONS, STATES
Group of research
BIOCOM-SC - Computational Biology and Complex Systems Group

Participants