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Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations

Author
Marsal, L.; Pallares, J.; Correig, X.; Orpella, A.; Bardes, D.; Alcubilla, R.
Type of activity
Journal article
Journal
Journal of applied physics
Date of publication
1999-01
Volume
85
Number
2
First page
1216
Last page
1221
DOI
10.1063/1.369344
Repository
http://hdl.handle.net/2117/130750 Open in new window
URL
https://aip.scitation.org/doi/10.1063/1.369344 Open in new window
Abstract
We fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms were determined by analyzing the temperature dependence of the current–voltage characteristics. The results show that the diodes with low doping concentrations (1016¿cm-3) are ideal, because the phosphorous slightly diffuses into the crystalline silicon, whereas diodes wi...
Keywords
Heterostructures, I-V characteristics, Solar cells
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants