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Thin film transistors obtained by hot wire CVD

Author
Puigdollers, J.; Orpella, A.; Dosev, D.; Voz, C.; Peiró, D.; Pallarés, J.; Marsal, L.; Bertomeu, J.; Andreu Batallé, Jordi; Alcubilla, R.
Type of activity
Journal article
Journal
Journal of non-crystalline solids
Date of publication
2000-05
Volume
266
Number
269
First page
1304
Last page
1309
DOI
https://doi.org/10.1016/S0022-3093(99)00942-4 Open in new window
Repository
http://hdl.handle.net/2117/112402 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S0022309399009424 Open in new window
Abstract
Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm-1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their elec...
Citation
Puigdollers, J., Orpella, A., Dosev, D., Voz, C., Peiró, D., Pallarés, J., Marsal, L., Bertomeu, J., Andreu Batallé, Jordi, Alcubilla, R. Thin film transistors obtained by hot wire CVD. "Journal of non-crystalline solids", Maig 2000, vol. 266, núm. 269, p. 1304-1309.
Keywords
E130, N100, T190
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants