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Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films

Autor
Martin, I.; Vetter, M.; Orpella, A.; Puigdollers, J.; Cuevas, A.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Applied physics letters
Data de publicació
2001-10
Volum
79
Número
14
Pàgina inicial
2199
Pàgina final
2201
DOI
https://doi.org/10.1063/1.1404406 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112825 Obrir en finestra nova
URL
http://aip.scitation.org/doi/abs/10.1063/1.1404406 Obrir en finestra nova
Resum
Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence of the effective surface recombination velocity, Seff, on deposition temperature, total pressure and methane (CH4) to silane (SiH4) ratio has been studied for these films using lifetime measurements made with the quasi-steady-state photoconductance technique. The dependence of...
Citació
Martin, I., Vetter, M., Orpella, A., Puigdollers, J., Cuevas, A., Alcubilla, R. Surface passivation of p-type crystalline Si by plasma enhanced vapour deposited amorphous SiCx Films. "Applied physics letters", Octubre 2001, vol. 79, núm. 14, p. 2199-2201.
Paraules clau
Amorphous semiconductors, Plasma chemical vapor deposition, Plasma materials processing, Thin films, Wide bandgap semiconductors
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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