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Stability of hidrogenated nanocrystalline silicon thin-film transistors

Autor
Orpella, A.; Voz, C.; Puigdollers, J.; Dosev, D.; Fonrodona, M.; Soler, D.; Bertomeu, J.; Asensi, J.; Andreu Batallé, Jordi; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2001-09
Volum
395
Número
1-2
Pàgina inicial
335
Pàgina final
338
DOI
https://doi.org/10.1016/S0040-6090(01)01290-1 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112823 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S0040609001012901 Obrir en finestra nova
Resum
Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prol...
Citació
Orpella, A., Voz, C., Puigdollers, J., Dosev, D., Fonrodona, M., Soler, D., Bertomeu, J., Asensi, J., Andreu Batallé, Jordi, Alcubilla, R. Stability of hidrogenated nanocrystalline silicon thin-film transistors. "Thin solid films", Setembre 2001, vol. 395, núm. 1-2, p. 335-338.
Paraules clau
Catalytic chemical vapour deposition, Deposition rate, Hydrogenated nanocrystalline silicon thin-films, Substrate temperature
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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